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MBRTA50080R

MBRTA50080R

MBRTA50080R

GeneSiC Semiconductor

MBRTA50080R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

MBRTA50080R Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Three Tower
Diode Element Material SILICON
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X3
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 80V
Voltage - Forward (Vf) (Max) @ If 840mV @ 250A
Case Connection ISOLATED
Forward Current 500A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 80V
Average Rectified Current 250A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 80V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
MBRTA50080R Product Details

MBRTA50080R Overview


This device will operate when the forward voltage is set to 500A.A reverse voltage peak of 1A is applied to devices like this one.

MBRTA50080R Features


a peak voltage of 1A
a reverse voltage peak of 1A

MBRTA50080R Applications


There are a lot of GeneSiC Semiconductor MBRTA50080R applications of rectifier diode array.

  • Free wheeling diode in low voltage converters
  • Crowbar applications
  • Battery chargers
  • General Rectification
  • Rectifier for drives applications
  • Rectifiers for UBS
  • Rectifiers in switch mode power supplies (SMPS)

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