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MBRTA60020R

MBRTA60020R

MBRTA60020R

GeneSiC Semiconductor

MBRTA60020R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

MBRTA60020R Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Three Tower
Diode Element Material SILICON
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X3
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 3mA @ 20V
Voltage - Forward (Vf) (Max) @ If 580mV @ 300A
Case Connection ISOLATED
Forward Current 600A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 20V
Average Rectified Current 300A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 20V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
MBRTA60020R Product Details

MBRTA60020R Overview


The device operates when the forward voltage is set to 600A.A reverse voltage peak of 1A is applied to devices like this one.

MBRTA60020R Features


a peak voltage of 1A
a reverse voltage peak of 1A

MBRTA60020R Applications


There are a lot of GeneSiC Semiconductor MBRTA60020R applications of rectifier diode array.

  • Rectifiers for UBS
  • Rectifiers in switch mode power supplies (SMPS)
  • General Rectification
  • Rectifier for drives applications
  • Crowbar applications
  • Battery chargers
  • Free wheeling diode in low voltage converters

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