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MBRTA60030

MBRTA60030

MBRTA60030

GeneSiC Semiconductor

MBRTA60030 datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

MBRTA60030 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Three Tower
Diode Element Material SILICON
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X3
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 30V
Voltage - Forward (Vf) (Max) @ If 700mV @ 300A
Case Connection ISOLATED
Forward Current 600A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 30V
Average Rectified Current 300A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 30V
Diode Configuration 1 Pair Common Cathode
RoHS Status RoHS Compliant
MBRTA60030 Product Details

MBRTA60030 Overview


Devices that have a forward voltage of 600A will operate.Array is powered by a reverse voltage peak of 1A.

MBRTA60030 Features


a peak voltage of 1A
a reverse voltage peak of 1A

MBRTA60030 Applications


There are a lot of GeneSiC Semiconductor MBRTA60030 applications of rectifier diode array.

  • Crowbar applications
  • Rectifiers for UBS
  • General Rectification
  • Battery chargers
  • Rectifiers in switch mode power supplies (SMPS)
  • Rectifier for drives applications
  • Free wheeling diode in low voltage converters

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