MUR10010CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MUR10010CTR Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 4 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Operating Temperature (Max)
150°C
Number of Elements
2
Element Configuration
Common Anode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
25μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.3V @ 50A
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
400A
Output Current-Max
50A
Application
SUPER FAST RECOVERY
Current - Average Rectified (Io)
100A DC
Max Reverse Voltage (DC)
100V
Average Rectified Current
100A
Number of Phases
1
Reverse Recovery Time
75 ns
Peak Reverse Current
25μA
Non-rep Pk Forward Current-Max
1500A
Reverse Voltage
100V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$71.81560
$1795.39
MUR10010CTR Product Details
MUR10010CTR Overview
The maximum output voltage can be set to 50A.Keeping the surge current under 400A and preventing it from exceeding it should be the rule.This device is powered with reverse voltage peak of 25μA V.
MUR10010CTR Features
a maximum output voltage of 50A a peak voltage of 25μA a reverse voltage peak of 25μA
MUR10010CTR Applications
There are a lot of GeneSiC Semiconductor MUR10010CTR applications of rectifier diode array.