MUR20010CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MUR20010CT Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Operating Temperature (Max)
175°C
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
25μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.3V @ 100A
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
800A
Output Current-Max
100A
Application
SUPER FAST RECOVERY
Current - Average Rectified (Io)
200A DC
Max Reverse Voltage (DC)
100V
Average Rectified Current
200A
Number of Phases
1
Reverse Recovery Time
75 ns
Peak Reverse Current
25μA
Reverse Voltage
100V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$78.26560
$1956.64
MUR20010CT Product Details
MUR20010CT Overview
A maximum output voltage of 100A can be supported.We should be monitoring the surge current and keeping it below 800A.A reverse voltage peak of 25μA is applied to devices like this one.
MUR20010CT Features
a maximum output voltage of 100A a peak voltage of 25μA a reverse voltage peak of 25μA
MUR20010CT Applications
There are a lot of GeneSiC Semiconductor MUR20010CT applications of rectifier diode array.