MUR20010CTR

new-10%

Manufacturer part number:MUR20010CTR

Manufacturer:GeneSiC Semiconductor

Description:MUR20010CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MUR20010CTR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	PRODUCTION (Last Updated: 5 months ago)
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Diode Element Material	SILICON
Packaging	Bulk
Published	2010
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
JESD-30 Code	R-PUFM-X2
Operating Temperature (Max)	175°C
Number of Elements	2
Element Configuration	Common Anode
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Schottky
Current - Reverse Leakage @ Vr	25μA @ 50V
Voltage - Forward (Vf) (Max) @ If	1.3V @ 100A
Operating Temperature - Junction	-55°C~150°C
Max Surge Current	800A
Output Current-Max	100A
Application	SUPER FAST RECOVERY
Current - Average Rectified (Io)	200A DC
Max Reverse Voltage (DC)	100V
Average Rectified Current	200A
Number of Phases	1
Reverse Recovery Time	75 ns
Peak Reverse Current	25μA
Reverse Voltage	100V
Diode Configuration	1 Pair Common Anode
RoHS Status	RoHS Compliant