MUR20060CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MUR20060CTR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 4 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Operating Temperature (Max)
175°C
Number of Elements
2
Element Configuration
Common Anode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
25μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.7V @ 50A
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
800A
Output Current-Max
100A
Application
SUPER FAST RECOVERY
Current - Average Rectified (Io)
200A DC
Max Reverse Voltage (DC)
600V
Average Rectified Current
200A
Number of Phases
1
Reverse Recovery Time
110 ns
Peak Reverse Current
25μA
Non-rep Pk Forward Current-Max
400A
Reverse Voltage
600V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$78.26560
$1956.64
MUR20060CTR Product Details
MUR20060CTR Overview
Array is capable of supporting a maximum output voltage of 100A.Keeping the surge current under 800A and preventing it from exceeding it should be the rule.A reverse voltage peak of 25μA is applied to devices like this one.
MUR20060CTR Features
a maximum output voltage of 100A a peak voltage of 25μA a reverse voltage peak of 25μA
MUR20060CTR Applications
There are a lot of GeneSiC Semiconductor MUR20060CTR applications of rectifier diode array.