MURF10060R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
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MURF10060R Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Mount
Chassis Mount, Through Hole
Mounting Type
Chassis Mount
Package / Case
TO-244AB
Number of Pins
2
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
Solder
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Pitch
2.54mm
Terminal Position
UPPER
Orientation
Right Angle
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Contacts
25
Number of Elements
2
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
25μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.7V @ 50A
Forward Current
50A
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
400A
Application
SUPER FAST RECOVERY
Current - Average Rectified (Io)
100A DC
Forward Voltage
1.7V
Max Reverse Voltage (DC)
600V
Average Rectified Current
100A
Number of Phases
1
Reverse Recovery Time
75 ns
Peak Reverse Current
25μA
Max Repetitive Reverse Voltage (Vrrm)
600V
Reverse Voltage
600V
Diode Configuration
1 Pair Common Anode
Max Forward Surge Current (Ifsm)
400A
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
MURF10060R Product Details
MURF10060R Overview
This device will operate when the forward voltage is set to 1.7V.As a general rule, surge currents should be monitored and kept below 400A.In this case, the forward voltage has to be set at 50A to operate the device.Array is powered by a reverse voltage peak of 25μA.
MURF10060R Features
1.7V forward voltage a peak voltage of 25μA a reverse voltage peak of 25μA
MURF10060R Applications
There are a lot of GeneSiC Semiconductor MURF10060R applications of rectifier diode array.