MURT10060R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MURT10060R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Mounting Type
Chassis Mount
Package / Case
Three Tower
Surface Mount
NO
Diode Element Material
SILICON
Packaging
Bulk
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Resistance
424Ohm
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Operating Temperature (Max)
150°C
Number of Elements
2
Configuration
COMMON ANODE, 2 ELEMENTS
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard, Reverse Polarity
Current - Reverse Leakage @ Vr
25μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.7V @ 100A
Case Connection
ISOLATED
Operating Temperature - Junction
-40°C~175°C
Max Surge Current
400A
Output Current-Max
50A
Application
SUPER FAST RECOVERY
Current - Average Rectified (Io)
100A DC
Number of Phases
1
Reverse Recovery Time
75ns
Peak Reverse Current
25μA
Non-rep Pk Forward Current-Max
1500A
Reverse Voltage
600V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$87.53920
$2188.48
MURT10060R Product Details
MURT10060R Overview
Array is capable of supporting a maximum output voltage of 50A.Surge currents should be monitored and prevented from exceeding 400A.Array is powered by a reverse voltage peak of 25μA.
MURT10060R Features
a maximum output voltage of 50A a peak voltage of 25μA a reverse voltage peak of 25μA
MURT10060R Applications
There are a lot of GeneSiC Semiconductor MURT10060R applications of rectifier diode array.