MURT20060R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MURT20060R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Operating Temperature (Max)
150°C
Operating Temperature (Min)
-55°C
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
25μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.7V @ 100A
Case Connection
ISOLATED
Max Surge Current
2kA
Output Current-Max
100A
Application
SUPER FAST RECOVERY
Current - Average Rectified (Io)
200A DC
Max Reverse Voltage (DC)
600V
Average Rectified Current
200A
Number of Phases
1
Reverse Recovery Time
160 ns
Peak Reverse Current
25μA
Non-rep Pk Forward Current-Max
2000A
Reverse Voltage
600V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$93.45960
$2336.49
MURT20060R Product Details
MURT20060R Overview
100A is its maximum output voltage.Array should be a rule to monArrayor the surge current and not allow Array to exceed 2kA.A reverse voltage peak of 25μA is used to power devices like this one.
MURT20060R Features
a maximum output voltage of 100A a peak voltage of 25μA a reverse voltage peak of 25μA
MURT20060R Applications
There are a lot of GeneSiC Semiconductor MURT20060R applications of rectifier diode array.