MURTA600120R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MURTA600120R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Operating Temperature (Max)
150°C
Number of Elements
2
Element Configuration
Common Anode
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
25μA @ 1200V
Voltage - Forward (Vf) (Max) @ If
2.6V @ 300A
Case Connection
ISOLATED
Operating Temperature - Junction
-55°C~150°C
Application
SUPER FAST RECOVERY
Voltage - DC Reverse (Vr) (Max)
1200V
Max Reverse Voltage (DC)
1.2kV
Average Rectified Current
300A
Number of Phases
1
Non-rep Pk Forward Current-Max
4400A
Diode Configuration
1 Pair Common Anode
Reverse Current-Max
25μA
Reverse Recovery Time-Max
0.28μs
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
18
$139.17111
$2505.07998
MURTA600120R Product Details
MURTA600120R Overview
The forward voltage should be monitored and never exceed 25μA.As soon as residual stored charge switches directions, the forward current's maximum reverse recovery time is 0.28μs.
MURTA600120R Features
a forward voltage of 25μA a forward voltage of 25μA
MURTA600120R Applications
There are a lot of GeneSiC Semiconductor MURTA600120R applications of rectifier diode array.