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GD25LQ256DYIGR

GD25LQ256DYIGR

GD25LQ256DYIGR

GigaDevice Semiconductor (HK) Limited

Memory IC

SOT-23

GD25LQ256DYIGR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FLASH - NOR
Voltage - Supply 1.65V~2V
Memory Size 256Mb 32M x 8
Memory Type Non-Volatile
Clock Frequency 120MHz
Memory Format FLASH
Memory Interface SPI - Quad I/O
Write Cycle Time - Word, Page 2.4ms
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
GD25LQ256DYIGR Product Details

GD25LQ256DYIGR Overview


In this case, the memory type of the device can be classified as Non-Volatile. In addition, memory ics is available in a Tape & Reel (TR) case as well. It is available in 8-WDFN Exposed Pad case. It is estimated that the memory size on the chip is 256Mb 32M x 8. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Featuring an extended operating temperature range of -40°C~85°C TA, this device allows it to be used in a variety of demanding applications. A supply voltage of 1.65V~2V can be applied to it. Its recommended mounting type is Surface Mount. The memory has a clock frequency rotation within 120MHz.

GD25LQ256DYIGR Features


Package / Case: 8-WDFN Exposed Pad

GD25LQ256DYIGR Applications


There are a lot of GigaDevice Semiconductor (HK) Limited GD25LQ256DYIGR Memory applications.

  • mainframes
  • printers
  • nonvolatile BIOS memory
  • personal computers
  • embedded logic
  • networks
  • hard disk drive (HDD)
  • cell phones
  • supercomputers
  • eSRAM

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