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GD25Q16CNIGR

GD25Q16CNIGR

GD25Q16CNIGR

GigaDevice Semiconductor (HK) Limited

Memory IC

SOT-23

GD25Q16CNIGR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 8-UDFN Exposed Pad
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Memory Size 16Mb 2M x 8
Memory Type Non-Volatile
Clock Frequency 120MHz
Memory Format FLASH
Memory Interface SPI - Quad I/O
Write Cycle Time - Word, Page 50μs, 2.4ms
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.44004 $1.32012
6,000 $0.41999 $2.51994
15,000 $0.41371 $6.20565
GD25Q16CNIGR Product Details

GD25Q16CNIGR Overview


In terms of its memory type, it can be classified as Non-Volatile. The case comes in Tape & Reel (TR) size. The case is embedded in 8-UDFN Exposed Pad. Memory size on the chip is 16Mb 2M x 8. This device uses takes advantage of the FLASH format. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. The recommended mounting type for this device is Surface Mount. There is a clock frequency rotation of the memory within a 120MHz range.

GD25Q16CNIGR Features


Package / Case: 8-UDFN Exposed Pad


GD25Q16CNIGR Applications


There are a lot of GigaDevice Semiconductor (HK) Limited
GD25Q16CNIGR Memory applications.


  • eSRAM
  • mainframes
  • multimedia computers
  • networking
  • personal computers
  • servers
  • supercomputers
  • telecommunications
  • workstations,
  • DVD disk buffer

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