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GD25Q80CNIGR

GD25Q80CNIGR

GD25Q80CNIGR

GigaDevice Semiconductor (HK) Limited

Memory IC 4mm mm

SOT-23

GD25Q80CNIGR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 8-UDFN Exposed Pad
Surface Mount YES
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.8mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N8
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 8Mb 1M x 8
Memory Type Non-Volatile
Operating Mode SYNCHRONOUS
Clock Frequency 120MHz
Memory Format FLASH
Memory Interface SPI - Quad I/O
Organization 8MX1
Memory Width 1
Write Cycle Time - Word, Page 50μs, 2.4ms
Memory Density 8388608 bit
Parallel/Serial SERIAL
Programming Voltage 3.3V
Height Seated (Max) 0.6mm
Length 4mm
Width 3mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
GD25Q80CNIGR Product Details

GD25Q80CNIGR Overview


In terms of its memory type, it can be classified as Non-Volatile. It is supplied votage within Tape & Reel (TR). 8-UDFN Exposed Pad case encloses it. This chip has an 8Mb 1M x 8 size of memory on it, so a lot of data can be stored on it. This device uses a FLASH-format memory, which is of mainstream design. Due to its wide temperature range of -40°C~85°C TA, this device is well suited to a wide range of applications that require high performance. A voltage of 2.7V~3.6V is possible to be applied to the supply. Its recommended mounting type is Surface Mount. The chip is terminated with 8 terminations. The comprehensive working procedure is supported by 1 functions in this part. This ic memory chip is designed to be supplied with 3.3V. In this memory, the clock frequency rotation is within an 120MHz range. Nonvolatile memory arrays require 3.3V programming voltage to change their state.

GD25Q80CNIGR Features


Package / Case: 8-UDFN Exposed Pad

GD25Q80CNIGR Applications


There are a lot of GigaDevice Semiconductor (HK) Limited GD25Q80CNIGR Memory applications.

  • hard disk drive (HDD)
  • graphics card
  • DVD disk buffer
  • personal digital assistants
  • telecommunications
  • data buffer
  • networking
  • printers
  • Cache memory
  • personal computers

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