HGT1S12N60B3S

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Manufacturer part number:HGT1S12N60B3S

Manufacturer:HARRIS SEMICONDUCTOR

Description:HGT1S12N60B3S datasheet pdf and Unclassified product details from HARRIS SEMICONDUCTOR stock available on our website

Case Package:SOT-23

Datasheet:HGT1S12N60B3S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Number of Terminals	2
Transistor Element Material	SILICON
JESD-609 Code	e0
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-263AB
Power Dissipation-Max (Abs)	104W
Turn On Time	22 ns
Collector Current-Max (IC)	27A
Turn Off Time-Nom (toff)	280 ns
Collector-Emitter Voltage-Max	600V
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	175ns
RoHS Status	Non-RoHS Compliant