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RF1S540SM

RF1S540SM

RF1S540SM

HARRIS SEMICONDUCTOR

RF1S540SM datasheet pdf and Unclassified product details from HARRIS SEMICONDUCTOR stock available on our website

SOT-23

RF1S540SM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON
JESD-609 Code e0
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-263AB
Drain Current-Max (Abs) (ID) 28A
Drain-source On Resistance-Max 0.077Ohm
Pulsed Drain Current-Max (IDM) 110A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 230 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 150W
RoHS Status Non-RoHS Compliant

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