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RF1S9530

RF1S9530

RF1S9530

HARRIS SEMICONDUCTOR

RF1S9530 datasheet pdf and Unclassified product details from HARRIS SEMICONDUCTOR stock available on our website

SOT-23

RF1S9530 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON
JESD-609 Code e0
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
JEDEC-95 Code TO-262AA
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.3Ohm
Pulsed Drain Current-Max (IDM) 48A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 500 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 75W
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.439671 $2.439671
10 $2.301577 $23.01577
100 $2.171299 $217.1299
500 $2.048395 $1024.1975
1000 $1.932448 $1932.448

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