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RFA100N05E

RFA100N05E

RFA100N05E

HARRIS SEMICONDUCTOR

RFA100N05E datasheet pdf and Unclassified product details from HARRIS SEMICONDUCTOR stock available on our website

SOT-23

RFA100N05E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount NO
Number of Terminals 5
Transistor Element Material SILICON
JESD-609 Code e0
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature MEGAFET
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T5
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code MO-093AA
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.008Ohm
Pulsed Drain Current-Max (IDM) 300A
DS Breakdown Voltage-Min 50V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 240W
Turn Off Time-Max (toff) 100ns
Turn On Time-Max (ton) 60ns
Power Dissipation Ambient-Max 240W
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $34.420720 $34.42072
10 $32.472378 $324.72378
100 $30.634318 $3063.4318
500 $28.900300 $14450.15
1000 $27.264434 $27264.434

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