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RFD16N02LSM

RFD16N02LSM

RFD16N02LSM

HARRIS SEMICONDUCTOR

RFD16N02LSM datasheet pdf and Unclassified product details from HARRIS SEMICONDUCTOR stock available on our website

SOT-23

RFD16N02LSM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Number of Terminals 2
Transistor Element Material SILICON
JESD-609 Code e0
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureMEGAFET, LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Terminal FormGULL WING
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 16A
Drain-source On Resistance-Max 0.022Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 90W
RoHS StatusNon-RoHS Compliant
In-Stock:2697 items

About RFD16N02LSM

The RFD16N02LSM from HARRIS SEMICONDUCTOR is a high-performance microcontroller designed for a wide range of embedded applications. This component features RFD16N02LSM datasheet pdf and Unclassified product details from HARRIS SEMICONDUCTOR stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RFD16N02LSM, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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