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IPW90R120C3

IPW90R120C3

IPW90R120C3

Infineon

900V TO-247-3

SOT-23

IPW90R120C3 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Tin
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Pbfree Code yes
Number of Terminations 3
Termination Through Hole
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Pin Count 3
Number of Elements 1
Power Dissipation-Max 417W
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 417W
Turn On Delay Time 70 ns
Voltage - Threshold 3V
Transistor Application SWITCHING
Rise Time 20ns
Drain to Source Voltage (Vdss) 900V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 24 ns
Turn-Off Delay Time 400 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 96A
Dual Supply Voltage 900V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 120mOhm
Rds On Max 120 mΩ
Nominal Vgs 3 V
Capacitance - Input 6.8nF
Height 21.1mm
Length 16.13mm
Width 5.21mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
IPW90R120C3 Product Details

IPW90R120C3 Overview


This device conducts a continuous drain current (ID) of 36A, which is the maximum continuous current transistor can conduct.Using VGS=900V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 900V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 400 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 96A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 120mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 70 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 900V.

IPW90R120C3 Features


a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 400 ns
based on its rated peak drain current 96A.
single MOSFETs transistor is 120mOhm
a 900V drain to source voltage (Vdss)


IPW90R120C3 Applications


There are a lot of Infineon
IPW90R120C3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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