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IRLML5103GTRPBF

IRLML5103GTRPBF

IRLML5103GTRPBF

Infineon

30V SOT-23

SOT-23

IRLML5103GTRPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Package / Case SOT-23
Number of Pins 3
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 540mW
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 540mW
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Rise Time 8.2ns
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type P-CHANNEL
Fall Time (Typ) 16 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 760mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.76A
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 600mOhm
Rds On Max 600 mΩ
Capacitance - Input 75pF
Height 1.016mm
Length 3.0226mm
Width 1.397mm
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.077426 $0.077426
500 $0.056932 $28.466
1000 $0.047442 $47.442
2000 $0.043526 $87.052
5000 $0.040677 $203.385
10000 $0.037840 $378.4
15000 $0.036595 $548.925
50000 $0.035984 $1799.2
IRLML5103GTRPBF Product Details

IRLML5103GTRPBF Overview


A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 760mA.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.0.76A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 23 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 600mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.

IRLML5103GTRPBF Features


a continuous drain current (ID) of 760mA
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 600mOhm
a 30V drain to source voltage (Vdss)


IRLML5103GTRPBF Applications


There are a lot of Infineon
IRLML5103GTRPBF applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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