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IRLML5103GTRPBF

IRLML5103GTRPBF

IRLML5103GTRPBF

Infineon

30V SOT-23

SOT-23

IRLML5103GTRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Package / Case SOT-23
Number of Pins 3
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Terminal Position DUAL
Terminal FormGULL WING
Number of Elements 1
Power Dissipation-Max 540mW
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation540mW
Turn On Delay Time10 ns
Transistor Application SWITCHING
Rise Time8.2ns
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type P-CHANNEL
Fall Time (Typ) 16 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 760mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.76A
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 600mOhm
Rds On Max 600 mΩ
Capacitance - Input 75pF
Height 1.016mm
Length 3.0226mm
Width 1.397mm
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:3430 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.077426$0.077426
500$0.056932$28.466
1000$0.047442$47.442
2000$0.043526$87.052
5000$0.040677$203.385
10000$0.037840$378.4
15000$0.036595$548.925
50000$0.035984$1799.2

IRLML5103GTRPBF Product Details

IRLML5103GTRPBF Overview


A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 760mA.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.0.76A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 23 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 600mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.

IRLML5103GTRPBF Features


a continuous drain current (ID) of 760mA
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 600mOhm
a 30V drain to source voltage (Vdss)


IRLML5103GTRPBF Applications


There are a lot of Infineon
IRLML5103GTRPBF applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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