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IRLML6302GTRPBF

IRLML6302GTRPBF

IRLML6302GTRPBF

Infineon

20V TO-236-3

SOT-23

IRLML6302GTRPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Package / Case TO-236-3
Number of Pins 3
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 600mOhm
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature HIGH RELIABILITY
HTS Code 8541.21.00.95
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 540mW
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 540mW
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Rise Time 18ns
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type P-CHANNEL
Fall Time (Typ) 22 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 780mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.78A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 60mOhm
Rds On Max 600 mΩ
Capacitance - Input 97pF
Height 1.02mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.126508 $0.126508
10 $0.119347 $1.19347
100 $0.112592 $11.2592
500 $0.106219 $53.1095
1000 $0.100206 $100.206
IRLML6302GTRPBF Product Details

IRLML6302GTRPBF Overview


Its continuous drain current is 780mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.Its drain current is 0.78A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 22 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 60mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).

IRLML6302GTRPBF Features


a continuous drain current (ID) of 780mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 22 ns
single MOSFETs transistor is 60mOhm
a 20V drain to source voltage (Vdss)


IRLML6302GTRPBF Applications


There are a lot of Infineon
IRLML6302GTRPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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