Surface Mount Tape & Reel (TR) Active Gate Drivers ICs Non-Inverting 1 650V V 8-SOIC (0.154, 3.90mm Width) Half-Bridge
SOT-23
2ED2109S06FXUMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Operating Temperature
-40°C~125°C TA
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Voltage - Supply
10V~20V
Input Type
Non-Inverting
Rise / Fall Time (Typ)
100ns 35ns
Channel Type
Synchronous
Number of Drivers
1
Driven Configuration
Half-Bridge
Gate Type
IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink)
290mA 700mA
Logic Voltage - VIL, VIH
1.1V 1.7V
High Side Voltage - Max (Bootstrap)
650V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.033010
$4.03301
10
$3.804727
$38.04727
100
$3.589365
$358.9365
500
$3.386193
$1693.0965
1000
$3.194522
$3194.522
2ED2109S06FXUMA1 Product Details
2ED2109S06FXUMA1 Overview
A higher level of flexibility is provided by its 8-SOIC (0.154, 3.90mm Width) package.Gate drivers is packaged in the way of Tape & Reel (TR).This configuration includes 1 drivers.Its recommended mounting way is Surface Mount.In the absence of a 10V~20V supply voltage, its superiority can be demonstrated.Gate drivers is designed wGate driversh a gate type of IGBT, N-Channel MOSFET.This device is allowed to operate in a temperature range of -40°C~125°C TA.Non-Inverting is the input type used in this program.Maximum (Bootstrap) voltage can be up to 650V.
2ED2109S06FXUMA1 Features
Embedded in the Tape & Reel (TR) package 1 drivers Employing a gate type of IGBT, N-Channel MOSFET High-side voltage - Max (Bootstrap) of 650V
2ED2109S06FXUMA1 Applications
There are a lot of Infineon Technologies 2ED2109S06FXUMA1 gate drivers applications.
Solar power supplies
Isolated switch mode power supplies (SMPS)
Solar inverters
Motor controllers
DC-DC Converters
Broadcast equipment
Welding
Isolated Supplies for Motor Control
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,