AIHD03N60RFATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
AIHD03N60RFATMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
53.6W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
5A
Test Condition
400V, 2.5A, 68 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 2.5A
IGBT Type
Trench Field Stop
Gate Charge
17.1nC
Current - Collector Pulsed (Icm)
7.5A
Td (on/off) @ 25°C
10ns/128ns
Switching Energy
50μJ (on), 40μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
AIHD03N60RFATMA1 Product Details
AIHD03N60RFATMA1 Description
AIHD03N60RFATMA1 is a single IGBT from the manufacturer Infineon Technologies with the breakdown voltage of 600V. The operating temperature of AIHD03N60RFATMA1 is -40°C~175°C TJ and its maximum power dissipation is 53.6W. AIHD03N60RFATMA1 has 3 pins and it is available in Tape & Reel (TR) packaging way. The Voltage - Collector Emitter Breakdown (Max) of AIHD03N60RFATMA1 is 600V.
AIHD03N60RFATMA1 Features
Optimized Eon,Eoff and Qrr for low switching losses
Operating range of 4 to30kHz
Smooth switching performance leading to low EMI levels
Very tight parameter distribution
Maximum junction temperature 175°C
Dynamically stress tested
Short circuit capability of 5μs
Best in class current versus package size performance