AUIRF2804L

new-10%

Manufacturer part number:AUIRF2804L

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 195A TO262

Case Package:SOT-23

Datasheet:AUIRF2804L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	120ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	130 ns
Turn-Off Delay Time	130 ns
Continuous Drain Current (ID)	195A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	270A
Drain-source On Resistance-Max	0.002Ohm
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	540 mJ
Height	9.65mm
Length	10.668mm
Width	4.6228mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant