AUIRFZ44VZSTRL

new-10%

Manufacturer part number:AUIRFZ44VZSTRL

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 57A D2PAK

Case Package:SOT-23

Datasheet:AUIRFZ44VZSTRL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	ULTRA LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	92W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	92W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12m Ω @ 34A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1690pF @ 25V
Current - Continuous Drain (Id) @ 25°C	57A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	62ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	57A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.012Ohm
Drain to Source Breakdown Voltage	60V
RoHS Status	ROHS3 Compliant