BAR 63-03W E6433 datasheet pdf and Diodes - RF product details from Infineon Technologies stock available on our website
SOT-23
BAR 63-03W E6433 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Package / Case
SC-76, SOD-323
Surface Mount
YES
Diode Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
HTS Code
8541.10.00.80
Subcategory
PIN Diodes
Technology
POSITIVE-INTRINSIC-NEGATIVE
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BAR63
JESD-30 Code
R-PDSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
250mW
Diode Type
PIN - Single
Application
SWITCHING
Current - Max
100mA
Capacitance @ Vr, F
0.3pF @ 5V 1MHz
Voltage - Peak Reverse (Max)
50V
Breakdown Voltage-Min
50V
Reverse Test Voltage
5V
Frequency Band
S B
Diode Capacitance-Nom
0.25pF
Resistance @ If, F
1Ohm @ 10mA 100MHz
Diode Capacitance-Max
0.3pF
Minority Carrier Lifetime-Nom
0.075 µs
Diode Res Test Current
5mA
Diode Res Test Frequency
100MHz
Diode Forward Resistance-Max
2Ohm
RoHS Status
RoHS Compliant
BAR 63-03W E6433 Product Details
BAR 63-03W E6433 Overview
Operating from 100mA is the maximum current for this device.This device operates at a maximum reverse voltage of 50V in accordance with its applicable specifications.This device may operate at its lowest breakdown voltage of 50V on occasion.A valid conversion result requires a reverse test voltage within 5V.
BAR 63-03W E6433 Features
from a maximum current of 100mA volts at its lowest breakdown voltage of 50V
BAR 63-03W E6433 Applications
There are a lot of Infineon Technologies BAR 63-03W E6433 applications of RF diodes.
UHF mixer
RF attenuators
Set top boxes
Two elements in series configuration in a small-sized plastic SMD package