BAS4004E6327HTSA1 datasheet pdf and Diodes - Rectifiers - Arrays product details from Infineon Technologies stock available on our website
SOT-23
BAS4004E6327HTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
HTS Code
8541.10.00.70
Terminal Form
GULL WING
Base Part Number
BAS40-04
Pin Count
3
Reference Standard
AEC-Q101
Number of Elements
2
Power Dissipation-Max
0.25W
Element Configuration
Dual
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1μA @ 30V
Voltage - Forward (Vf) (Max) @ If
1V @ 40mA
Forward Current
120mA
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
150°C Max
Max Surge Current
200mA
Output Current-Max
0.12A
Halogen Free
Not Halogen Free
Current - Average Rectified (Io)
120mA DC
Forward Voltage
380mV
Max Reverse Voltage (DC)
40V
Average Rectified Current
120mA
Reverse Recovery Time
100 ps
Peak Reverse Current
1μA
Max Repetitive Reverse Voltage (Vrrm)
40V
Peak Non-Repetitive Surge Current
200mA
Diode Configuration
1 Pair Series Connection
Max Forward Surge Current (Ifsm)
200mA
Recovery Time
100 ps
Height
900μm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.08081
$0.24243
6,000
$0.07343
$0.44058
15,000
$0.06605
$0.99075
30,000
$0.06236
$1.8708
75,000
$0.05867
$4.40025
BAS4004E6327HTSA1 Product Details
BAS4004E6327HTSA1 Overview
In the case of 380mV forward voltage, the device will operate.This device can support a maximum output voltage of 0.12A.Array should be a rule to monArrayor the surge current and not allow Array to exceed 200mA.In this case, the forward voltage has to be set at 120mA to operate the device.The reverse voltage peak of this device is 1μA.A semiconductor device's maximum reverse leakage current is 1μA, which is the current created by its reverse bias.
BAS4004E6327HTSA1 Features
380mV forward voltage a maximum output voltage of 0.12A a peak voltage of 1μA a reverse voltage peak of 1μA
BAS4004E6327HTSA1 Applications
There are a lot of Infineon Technologies BAS4004E6327HTSA1 applications of rectifier diode array.