BC 818K-25 E6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC 818K-25 E6327 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Base Part Number
BC818
Configuration
Single
Power - Max
500mW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
170MHz
Power Dissipation-Max (Abs)
0.5W
RoHS Status
RoHS Compliant
BC 818K-25 E6327 Product Details
BC 818K-25 E6327 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Device displays Collector Emitter Breakdown (25V maximal voltage).
BC 818K-25 E6327 Features
the DC current gain for this device is 160 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA
BC 818K-25 E6327 Applications
There are a lot of Infineon Technologies BC 818K-25 E6327 applications of single BJT transistors.