BC 850C B5003 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC 850C B5003 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BC850
Power - Max
330mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
250MHz
BC 850C B5003 Product Details
BC 850C B5003 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Device displays Collector Emitter Breakdown (45V maximal voltage).
BC 850C B5003 Features
the DC current gain for this device is 420 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA
BC 850C B5003 Applications
There are a lot of Infineon Technologies BC 850C B5003 applications of single BJT transistors.