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BC80725WE6327BTSA1

BC80725WE6327BTSA1

BC80725WE6327BTSA1

Infineon Technologies

BC80725WE6327BTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC80725WE6327BTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package PG-SOT323-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BC807
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 200MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.021049 $0.021049
10 $0.019858 $0.19858
100 $0.018734 $1.8734
500 $0.017673 $8.8365
1000 $0.016673 $16.673
BC80725WE6327BTSA1 Product Details

BC80725WE6327BTSA1 Overview


This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.The product comes in the supplier device package of PG-SOT323-3.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

BC80725WE6327BTSA1 Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of PG-SOT323-3

BC80725WE6327BTSA1 Applications


There are a lot of Infineon Technologies BC80725WE6327BTSA1 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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