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BC847BWE6433HTMA1

  • BC847BWE6433HTMA1
  • BC847BWE6433HTMA1

BC847BWE6433HTMA1

BC847BWE6433HTMA1

Infineon Technologies

BC847BWE6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC847BWE6433HTMA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number BC847
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
BC847BWE6433HTMA1 Product Details

BC847BWE6433HTMA1 Overview


In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Parts of this part have transition frequencies of 250MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.

BC847BWE6433HTMA1 Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 250MHz

BC847BWE6433HTMA1 Applications


There are a lot of Infineon Technologies BC847BWE6433HTMA1 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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