BC849CWE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC849CWE6327HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Additional Feature
LOW NOISE
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC849
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
250mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
250MHz
Frequency - Transition
250MHz
BC849CWE6327HTSA1 Product Details
BC849CWE6327HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.250MHz is present in the transition frequency.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BC849CWE6327HTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA a transition frequency of 250MHz
BC849CWE6327HTSA1 Applications
There are a lot of Infineon Technologies BC849CWE6327HTSA1 applications of single BJT transistors.