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BC849CWE6327HTSA1

BC849CWE6327HTSA1

BC849CWE6327HTSA1

Infineon Technologies

BC849CWE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC849CWE6327HTSA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOW NOISE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC849
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
BC849CWE6327HTSA1 Product Details

BC849CWE6327HTSA1 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.250MHz is present in the transition frequency.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BC849CWE6327HTSA1 Features


the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 250MHz

BC849CWE6327HTSA1 Applications


There are a lot of Infineon Technologies BC849CWE6327HTSA1 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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