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BC858BL3E6327

  • BC858BL3E6327
  • BC858BL3E6327

BC858BL3E6327

BC858BL3E6327

Infineon Technologies

BC858BL3E6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC858BL3E6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 250mW
Reach Compliance Code unknown
Frequency 250MHz
Base Part Number BC858
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
BC858BL3E6327 Product Details

BC858BL3E6327 Overview


This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.The maximum collector current is 100mA volts.

BC858BL3E6327 Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V

BC858BL3E6327 Applications


There are a lot of Infineon Technologies BC858BL3E6327 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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