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BCP 54-16 H6779

BCP 54-16 H6779

BCP 54-16 H6779

Infineon Technologies

BCP 54-16 H6779 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCP 54-16 H6779 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BCP54
Power - Max 2W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 100MHz
BCP 54-16 H6779 Product Details

BCP 54-16 H6779 Overview


This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device has a 45V maximal voltage - Collector Emitter Breakdown.

BCP 54-16 H6779 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCP 54-16 H6779 Applications


There are a lot of Infineon Technologies BCP 54-16 H6779 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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