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BCR10PNB6327XT

BCR10PNB6327XT

BCR10PNB6327XT

Infineon Technologies

BCR10PNB6327XT datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Infineon Technologies stock available on our website

SOT-23

BCR10PNB6327XT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-6
Packaging Tape & Reel (TR)
Published 2011
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 250mW
Base Part Number BCR10PN
Power - Max 250mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 130MHz
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 10kOhms
RoHS Status ROHS3 Compliant

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