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BCR183SH6433XTMA1

BCR183SH6433XTMA1

BCR183SH6433XTMA1

Infineon Technologies

BCR183SH6433XTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Infineon Technologies stock available on our website

SOT-23

BCR183SH6433XTMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Max Power Dissipation 250mW
Terminal Form GULL WING
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Frequency - Transition 200MHz
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
20,000 $0.05326 $1.0652

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