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BCV61CE6327HTSA1

BCV61CE6327HTSA1

BCV61CE6327HTSA1

Infineon Technologies

BCV61CE6327HTSA1 datasheet pdf and Transistors - Special Purpose product details from Infineon Technologies stock available on our website

SOT-23

BCV61CE6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Applications Current Mirror
Voltage - Rated DC 30V
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating 100mA
Frequency 250MHz
Base Part Number BCV61
Reference Standard AEC-Q101
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 300mW
Halogen Free Not Halogen Free
Transistor Type 2 NPN, Base Collector Junction
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 110
DC Current Gain-Min (hFE) 420
Width 2.9mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $16.070160 $16.07016
10 $15.160528 $151.60528
100 $14.302385 $1430.2385
500 $13.492816 $6746.408
1000 $12.729072 $12729.072
BCV61CE6327HTSA1 Product Details

BCV61CE6327HTSA1 Description


The BCV61CE6327HTSA1 is an NPN Silicon Double Transistor.



BCV61CE6327HTSA1 Features


  • To be used as a current mirror

  • Good thermal coupling and VBE matching

  • High current gain

  • The low collector-emitter saturation voltage

  • Pb-free (RoHS compliant) package

  • Qualified according to AEC Q101



BCV61CE6327HTSA1 Applications


  • Industrial


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