BCX6910E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCX6910E6327HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BCX69
Power - Max
3W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
100MHz
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.022598
$0.022598
10
$0.021319
$0.21319
100
$0.020112
$2.0112
500
$0.018974
$9.487
1000
$0.017900
$17.9
BCX6910E6327HTSA1 Product Details
BCX6910E6327HTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 85 @ 500mA 1V DC current gain.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BCX6910E6327HTSA1 Features
the DC current gain for this device is 85 @ 500mA 1V the vce saturation(Max) is 500mV @ 100mA, 1A
BCX6910E6327HTSA1 Applications
There are a lot of Infineon Technologies BCX6910E6327HTSA1 applications of single BJT transistors.