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BCX6910E6327HTSA1

BCX6910E6327HTSA1

BCX6910E6327HTSA1

Infineon Technologies

BCX6910E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCX6910E6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCX69
Power - Max 3W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 100MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.022598 $0.022598
10 $0.021319 $0.21319
100 $0.020112 $2.0112
500 $0.018974 $9.487
1000 $0.017900 $17.9
BCX6910E6327HTSA1 Product Details

BCX6910E6327HTSA1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 85 @ 500mA 1V DC current gain.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

BCX6910E6327HTSA1 Features


the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A

BCX6910E6327HTSA1 Applications


There are a lot of Infineon Technologies BCX6910E6327HTSA1 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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