BDP947E6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.
BDP947E6327HTSA1 Features
the DC current gain for this device is 100 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
BDP947E6327HTSA1 Applications
There are a lot of Infineon Technologies BDP947E6327HTSA1 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
