BF998E6327HTSA1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Infineon Technologies stock available on our website
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BF998E6327HTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Package / Case
TO-253-4, TO-253AA
Number of Pins
4
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
12V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
30mA
Frequency
45MHz
Base Part Number
BF998
Pin Count
4
Number of Elements
1
Configuration
SINGLE
Number of Channels
1
Operating Mode
DUAL GATE, DEPLETION MODE
Case Connection
SOURCE
Current - Test
10mA
Halogen Free
Not Halogen Free
Transistor Type
N-Channel
Continuous Drain Current (ID)
30mA
Gate to Source Voltage (Vgs)
8V
Gain
28dB
Drain Current-Max (Abs) (ID)
0.03A
Input Capacitance
1.2pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
Noise Figure
2.8dB
Height
1mm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.14187
$0.42561
6,000
$0.13415
$0.8049
15,000
$0.12644
$1.8966
30,000
$0.11719
$3.5157
75,000
$0.11334
$8.5005
BF998E6327HTSA1 Product Details
BF998E6327HTSA1 Description
BF998E6327HTSA1 N-Channel MOSFET is a type of Power MOSFET that is build on a semiconductor process optimized to combine performance with reliability. BF998E6327HTSA1 MOSFET is ideal for low frequency applications requiring performance and ruggedness. Infineon Technologies BF998E6327HTSA1 is general use and is suitable for Fast EV charging, Motor control and drives, Solutions for solar energy systems, and Uninterruptible Power Supply.