BFP840FESDH6327XTSA1

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Manufacturer part number:BFP840FESDH6327XTSA1

Manufacturer:Infineon Technologies

Description:RF Bipolar Transistors RF BIP TRANSISTORS

Case Package:SOT-23

Datasheet:BFP840FESDH6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Number of Pins	4
Transistor Element Material	SILICON GERMANIUM CARBON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Max Power Dissipation	75mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Frequency	85GHz
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	BFP840
Number of Elements	1
Element Configuration	Dual
Power Dissipation	75mW
Transistor Application	AMPLIFIER
Halogen Free	Halogen Free
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	2.25V
Max Collector Current	35mA
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 10mA 1.8V
Collector Emitter Breakdown Voltage	2.6V
Gain	35dB
Transition Frequency	85000MHz
Max Breakdown Voltage	2.6V
Collector Base Voltage (VCBO)	2.9V
Emitter Base Voltage (VEBO)	2.6V
Continuous Collector Current	35mA
Noise Figure (dB Typ @ f)	0.75dB @ 5.5GHz
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free