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BG3130E6327HTSA1

BG3130E6327HTSA1

BG3130E6327HTSA1

Infineon Technologies

MOSFET N-CH DUAL 8V SOT-363

SOT-23

BG3130E6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case 6-VSSOP, SC-88, SOT-363
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Voltage - Rated 8V
Additional Feature LOW NOISE
Terminal Form GULL WING
Current Rating 25mA
Frequency 800MHz
Base Part Number BG3130
JESD-30 Code R-PDSO-G6
Number of Elements 2
Operating Mode DUAL GATE, DEPLETION MODE
Current - Test 14mA
Transistor Application AMPLIFIER
Transistor Type 2 N-Channel (Dual)
Gain 24dB
Drain Current-Max (Abs) (ID) 0.025A
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
Noise Figure 1.3dB
Voltage - Test 5V
RoHS Status RoHS Compliant

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