BGA231N7E6330XTSA1 datasheet pdf and RF Amplifiers product details from Infineon Technologies stock available on our website
SOT-23
BGA231N7E6330XTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Pbfree Code
yes
Construction
COMPONENT
Frequency
-1.615GHz
Operating Temperature (Max)
85°C
Operating Temperature (Min)
-40°C
Number of Channels
1
Max Supply Voltage
3.6V
Test Frequency
1.575GHz
Power Dissipation-Max
72mW
Operating Supply Current
4.4mA
Gain
16 dB
RF/Microwave Device Type
NARROW BAND LOW POWER
Characteristic Impedance
50Ohm
Noise Figure
0.75 dB
P1dB
-5 dBm
RoHS Status
RoHS Compliant
BGA231N7E6330XTSA1 Product Details
BGA231N7E6330XTSA1 Overview
NARROW BAND LOW POWER RF/Microwave Device Type RF Amplifier.This RF Amplifier needs to operate at 4.4mA supply current in order to deliver its performance.There are 6 pins on this high power RF Amplifier.
BGA231N7E6330XTSA1 Features
NARROW BAND LOW POWER RF/Microwave Amplifier 6 pins
BGA231N7E6330XTSA1 Applications
There are a lot of Infineon Technologies BGA231N7E6330XTSA1 RF Amplifiers applications.