13 dB NARROW BAND LOW POWER 100MHz P1dB:-2.5 dBm 2.3 dB 8mA
SOT-23
BGA420E6327 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Package / Case
SOT-343-4
Number of Pins
4
JESD-609 Code
e3
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Subcategory
RF/Microwave Amplifiers
Technology
BIPOLAR
Number of Functions
1
Construction
COMPONENT
Frequency
100MHz
Operating Supply Voltage
3V
Power Supplies
3V
Number of Channels
1
Test Frequency
1GHz
Power Dissipation-Max
90mW
Operating Supply Current
8mA
Nominal Supply Current
6.7mA
Gain
13 dB
RF/Microwave Device Type
NARROW BAND LOW POWER
Characteristic Impedance
50Ohm
Noise Figure
2.3 dB
P1dB
-2.5 dBm
Length
2mm
Width
1.25mm
Thickness
900μm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BGA420E6327 Product Details
BGA420E6327 Overview
This RF amplifier has a very low cost and is capable of NARROW BAND LOW POWER RF/Microwave devices of any type.Since the RF power Amplifier is packed in SOT-343-4, shipping overseas is convenient.Optimal performance can be achieved by operating the supply current in the 8mA range.With 4 pins, the high power RF Amplifier is designed.As a whole, there are 1 function(s) in the RF Amplifier.The type is specifically RF/Microwave Amplifiers.RF power Amplifier shouldrun at a temperature 150°C higher than 150°C.
BGA420E6327 Features
NARROW BAND LOW POWER RF/Microwave Amplifier 4 pins
BGA420E6327 Applications
There are a lot of Infineon Technologies BGA420E6327 RF Amplifiers applications.