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BGB717L7ESDE6327

BGB717L7ESDE6327

BGB717L7ESDE6327

Infineon Technologies

12 dB NARROW BAND LOW POWER Digi-Reel® 108MHz P1dB:-5.5 dBm 1 dB 3mA

SOT-23

BGB717L7ESDE6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Number of Pins 6
Packaging Digi-Reel®
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Construction COMPONENT
Frequency 108MHz
Operating Supply Voltage 4V
Test Frequency 100MHz
Power Dissipation-Max 100mW
Operating Supply Current 3mA
Gain 12 dB
RF/Microwave Device Type NARROW BAND LOW POWER
Characteristic Impedance 50Ohm
Noise Figure 1 dB
P1dB -5.5 dBm
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.41000 $0.41
500 $0.4059 $202.95
1000 $0.4018 $401.8
1500 $0.3977 $596.55
2000 $0.3936 $787.2
2500 $0.3895 $973.75
BGB717L7ESDE6327 Product Details

BGB717L7ESDE6327 Overview


A cost-effective RF amplifier with NARROW BAND LOW POWER RF/Microwave device type.High reliability is achieved using advanced RF Amp' packaging Digi-Reel®.For it to perform as expected, the supply current must be in the range of 3mA.6 pins are on the high power RF Amplifier.At a temperature around 150°C degrees Celsius, RF power Amplifier shouldbe running.

BGB717L7ESDE6327 Features


NARROW BAND LOW POWER RF/Microwave Amplifier
6 pins


BGB717L7ESDE6327 Applications


There are a lot of Infineon Technologies
BGB717L7ESDE6327 RF Amplifiers applications.


  • Avionics
  • GPS
  • GLONASS
  • BeiDou
  • Galileo
  • Wireless communications
  • ISM applications
  • Wireless infrastructure
  • Automated test equipment
  • RF/IF gain control

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