BSB012NE2LX datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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BSB012NE2LX Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
3-WDSON
Surface Mount
YES
Number of Pins
7
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
OptiMOS™
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Pin Count
2
JESD-30 Code
R-MBCC-N2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.8W Ta 57W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
5.7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
4900pF @ 12V
Current - Continuous Drain (Id) @ 25°C
37A Ta 170A Tc
Gate Charge (Qg) (Max) @ Vgs
67nC @ 10V
Rise Time
6ns
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4.6 ns
Turn-Off Delay Time
34 ns
Continuous Drain Current (ID)
56A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
39A
Drain-source On Resistance-Max
0.0012Ohm
Pulsed Drain Current-Max (IDM)
400A
DS Breakdown Voltage-Min
25V
Avalanche Energy Rating (Eas)
285 mJ
Radiation Hardening
No
RoHS Status
RoHS Compliant
BSB012NE2LX Product Details
BSB012NE2LX Description
BSB012NE2LX is a class-leading power MOSFET for the highest power density and energy efficient solutions. The best option for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications is OptiMOSTM 25V, which combines extremely low gate and output charges with the lowest on-state resistance in small footprint packages.
For the most difficult applications, BSB012NE2LX MOSFETs are offered in high-performance packages, allowing you complete options in maximizing space, efficiency, and cost.
BSB012NE2LX Features
100% Rg Tested
Low parasitic inductance
Low profile (<0.7 mm)
Optimized for high-performance Buck converter
100% avalanche tested
Qualified according to JEDEC1) for target applications
Superior thermal resistance
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Double. sided cooling
Compatible with DirectFET? package MX footprint and outline