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BSB012NE2LX

BSB012NE2LX

BSB012NE2LX

Infineon Technologies

BSB012NE2LX datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSB012NE2LX Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 3-WDSON
Surface MountYES
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2011
Series OptiMOS™
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Pin Count2
JESD-30 Code R-MBCC-N2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 57W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time5.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 12V
Current - Continuous Drain (Id) @ 25°C 37A Ta 170A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time6ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 39A
Drain-source On Resistance-Max 0.0012Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 285 mJ
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:4236 items

BSB012NE2LX Product Details

BSB012NE2LX Description

BSB012NE2LX is a class-leading power MOSFET for the highest power density and energy efficient solutions. The best option for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications is OptiMOSTM 25V, which combines extremely low gate and output charges with the lowest on-state resistance in small footprint packages.

For the most difficult applications, BSB012NE2LX MOSFETs are offered in high-performance packages, allowing you complete options in maximizing space, efficiency, and cost.


BSB012NE2LX Features

  • 100% Rg Tested

  • Low parasitic inductance

  • Low profile (<0.7 mm)

  • Optimized for high-performance Buck converter

  • 100% avalanche tested

  • Qualified according to JEDEC1) for target applications

  • Superior thermal resistance

  • Pb-free plating; RoHS compliant

  • Halogen-free according to IEC61249-2-21

  • Double. sided cooling

  • Compatible with DirectFET? package MX footprint and outline


BSB012NE2LX Applications

  • On-board power for server

  • Synchronous rectification

  • Power management for high-performance computing

  • High power density point of load converters


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