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BSC027N10NS5ATMA1

  • BSC027N10NS5ATMA1
  • BSC027N10NS5ATMA1

BSC027N10NS5ATMA1

BSC027N10NS5ATMA1

Infineon Technologies

BSC027N10NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSC027N10NS5ATMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 39 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3W Ta 214W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 146μA
Input Capacitance (Ciss) (Max) @ Vds 8200pF @ 50V
Current - Continuous Drain (Id) @ 25°C 23A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 111nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $1.96824 $9.8412
BSC027N10NS5ATMA1 Product Details

BSC027N10NS5ATMA1 Description

 

BSC027N10NS5ATMA1 MOSFETs are appropriate for wireless charging, adapter, and other telecom-related applications. BSC027N10NS5ATMA1 MOSFET low gate charge minimizes switching losses, without compromising conduction losses. BSC027N10NS5ATMA1 Infineon Technologies can provide an extremely low threshold voltage and enable higher power density.

 

 

BSC027N10NS5ATMA1 Features

 

Higher power density designs

Higher switching frequency

Reduced parts count

Driven directly from microcontrollers

System cost reduction

 

BSC027N10NS5ATMA1 Applications

 

Wireless charging

Adapter

Telecom

 


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