BSC030N04NSGATMA1

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Manufacturer part number:BSC030N04NSGATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 40V 23A 8-Pin TDSON EP T/R

Case Package:SOT-23

Datasheet:BSC030N04NSGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 83W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 49μA
Input Capacitance (Ciss) (Max) @ Vds	4900pF @ 20V
Current - Continuous Drain (Id) @ 25°C	23A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	61nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	23A
Drain-source On Resistance-Max	0.003Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	115 mJ
RoHS Status	ROHS3 Compliant