BSM30GP60BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM30GP60BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
24
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
24
JESD-30 Code
R-XUFM-X24
Qualification Status
Not Qualified
Number of Elements
7
Configuration
Full Bridge
Case Connection
ISOLATED
Power - Max
180W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Three Phase Bridge Rectifier
Current - Collector Cutoff (Max)
300nA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
50A
Turn On Time
105 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 30A
Turn Off Time-Nom (toff)
315 ns
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
1.6nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$92.68100
$926.81
BSM30GP60BOSA1 Product Details
BSM30GP60BOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.
BSM30GP60BOSA1 Applications
·Auxiliary inverters
·Motor drives
·Servo drives
BSM30GP60BOSA1 Features
·Low VcEsat
·Tjop=150°℃
·Trench IGBT 4
·VCEsatwith positive temperature coefficient
Mechanical Features
·AlzO3 substrate with low thermal resistance
·High power and thermal cycling capability*Integrated NTC temperature sensor