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BSM30GP60BOSA1

BSM30GP60BOSA1

BSM30GP60BOSA1

Infineon Technologies

BSM30GP60BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM30GP60BOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 24
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 24
JESD-30 Code R-XUFM-X24
Qualification Status Not Qualified
Number of Elements 7
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 180W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Current - Collector Cutoff (Max) 300nA
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 50A
Turn On Time 105 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Turn Off Time-Nom (toff) 315 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 1.6nF @ 25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10 $92.68100 $926.81
BSM30GP60BOSA1 Product Details

BSM30GP60BOSA1                                           Description

 

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

 

BSM30GP60BOSA1                                            Applications

·Auxiliary inverters

·Motor drives

·Servo drives

 

BSM30GP60BOSA1                                           Features

·Low VcEsat

·Tjop=150°℃

·Trench IGBT 4

·VCEsatwith positive temperature coefficient

 

Mechanical Features

·AlzO3 substrate with low thermal resistance

·High power and thermal cycling capability*Integrated NTC temperature sensor

·Copper base plate     

 


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